PART |
Description |
Maker |
CURMT103-HF |
Halogen Free Ultra Fast Recovery Rectifiers, V-RRM=200V, V-R=200V, I-O=1A
|
Comchip Technology
|
FQPF32N20C FQP32N20C |
200V N-Channel Advance Q-FET C-Series From old datasheet system 200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor] FAIRCHILD SEMICONDUCTOR CORP
|
FDP18N20F FDPF18N20FT |
N-Channel UniFETTM FRFETMOSFET 200V, 18A, 140m N-Channel MOSFET 200V, 18A, 0.14楼? N-Channel MOSFET 200V, 18A, 0.14Ω
|
Fairchild Semiconductor
|
FQI19N20C FQB19N20C FQB19N20CTM |
200V N-Channel Advance Q-FET C-Series 200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
FQPF19N20C FQP19N20C FQP19N20CTSTU |
200V N-Channel Advance Q-FET C-Series 200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
IRFU230B IRFR230B IRFU230BTLTUFP001 |
200V N-Channel B-FET / Substitute of IRFU230A 200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
FQD18N20V2 FQU18N20V2 FQD18N20V2TF FQD18N20V2TM FQ |
200V N-Channel Advanced QFET V2 series 200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
IRF9610S IRF9610STRL IRF9610STRR |
-200V Single P-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-1.8A) Power MOSFET(Vdss=-200V/ Rds(on)=3.0ohm/ Id=-1.8A) CAP 3.9PF 50V /-0.1PF C0G SMD-0402 TR-7-PA SN100 HIGH-FREQ 功率MOSFET(减振钢板基本\u003d-00V,的Rds(on)\u003d 3.0ohm,身份证\u003d- 1.8A
|
IRF[International Rectifier] International Rectifier, Corp.
|
IRF5Y31N20 |
200V Single N-Channel Hi-Rel MOSFET in a TO-257AA package POWER MOSFET N-CHANNEL(Vdss=200V, Rds(on)=0.092ohm, Id=18A*)
|
IRF[International Rectifier]
|
IRFI640G |
200V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package Power MOSFET(Vdss=200V/ Rds(on)=0.18ohm/ Id=9.8A) Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=9.8A) 功率MOSFET(减振钢板基本\u003d 200V的电压,的Rds(on)\u003d 0.18ohm,身份证\u003d 9.8A
|
IRF[International Rectifier] International Rectifier, Corp.
|